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Please use this identifier to cite or link to this item: http://elib.bsu.by/handle/123456789/196240
Title: Сравнительный анализ быстродействия биполярного и МОП-транзисторов
Authors: Белоус, Анатолий Иванович
Ефименко, Сергей Афанасьевич
Понарядов, Владимир Васильевич
Прибыльский, Александр Владимирович
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2001. - № 2. – С. 22-28.
Abstract: The article is dedicated to investigation of key characteristics of bipolar and MOS-transistors, determining their high speed as parts of Bi-CMOS LSIC. Fly-over time spaces through active structure in “source-drain” and “emitter-collector” are compared, slope, current density and geometrical dimensions of n-p-n- and n-MOS-transistors are defined. Demands to boundary frequency of bipolar transistor in Bi-CMOS LSIC are specified. The results of experimental investigation are provided.
URI: http://elib.bsu.by/handle/123456789/196240
ISSN: 0321-0367
Appears in Collections:2001, №2 (май)

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