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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/107099
Title: Admittance and permittivity in doped layered TlGaSe2
Authors: Dawood, S. A.
Fedotov, A. K.
Mammadov, T. G.
Zhukowski, P.
Koltunowicz, T. N.
Saad, A. N.
Drozdov, N. A.
Issue Date: Jun-2014
Citation: Acta Physica Polonica A. – 2014 – Vol. 125, № 6. – P. 1267 – 1270.
Abstract: In doped TlGaSe2 crystals the phase transitions at low temperatures were observed using admittance and dielectric spectroscopy in a temperature range of 80 - 320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations Nimp < 0,5 at.% nonequilibrium electronic phase transition is observed. Doping with Nimp > 0,5 at.% resulted in full suppression of this phase transition presence.
URI: http://elib.bsu.by/handle/123456789/107099
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