Please use this identifier to cite or link to this item:
|Title:||Admittance and permittivity in doped layered TlGaSe2|
|Authors:||Dawood, S. A.|
Fedotov, A. K.
Mammadov, T. G.
Koltunowicz, T. N.
Saad, A. N.
Drozdov, N. A.
|Citation:||Acta Physica Polonica A. – 2014 – Vol. 125, № 6. – P. 1267 – 1270.|
|Abstract:||In doped TlGaSe2 crystals the phase transitions at low temperatures were observed using admittance and dielectric spectroscopy in a temperature range of 80 - 320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations Nimp < 0,5 at.% nonequilibrium electronic phase transition is observed. Doping with Nimp > 0,5 at.% resulted in full suppression of this phase transition presence.|
|Appears in Collections:||Архив статей|
Files in This Item:
|Admittance and Permittivity in Doped Layered TlGaSe2.pdf||852,52 kB||Adobe PDF||View/Open|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.