Аппроксимация эмиссионного тока электронов в диэлектрик затвора МОП-ПТ

Abstract

Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFETs with the substrate doping levels of IO22, IO23, IO2,1 m 3 in the temperature interval 173 + 373 K. The temperature influence on the value of the electron emission currents ratio is examined. These currents were calculated for the length that equals to the abrupt drain-junction depletion width approximated by a segment with homogeneous field. It has been shown that the emission current ratio calculated by the method in which the actual drain-junction depletion width is replaced by the equivalent one having a uniform longitudinal field, could be accurate only for the high temperature range.