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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/194994
Title: Аппроксимация эмиссионного тока электронов в диэлектрик затвора МОП-ПТ
Authors: Андреев, А. Д.
Комаров, Ф. Ф.
Михей, В. Н.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2000
Publisher: Минск : Універсітэцкае
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2000. - № 1. – С. 72-74.
Abstract: Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFETs with the substrate doping levels of IO22, IO23, IO2,1 m 3 in the temperature interval 173 + 373 K. The temperature influence on the value of the electron emission currents ratio is examined. These currents were calculated for the length that equals to the abrupt drain-junction depletion width approximated by a segment with homogeneous field. It has been shown that the emission current ratio calculated by the method in which the actual drain-junction depletion width is replaced by the equivalent one having a uniform longitudinal field, could be accurate only for the high temperature range.
URI: http://elib.bsu.by/handle/123456789/194994
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2000, №1 (январь)

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