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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/203762
Title: Переход от слабой к сильной локализации при имплантации тонких пленок железа ионами бора и азота
Other Titles: Transition from weak to strong localization at successive implantation in thin iron films / A.A.Mazanik, V.V.Uglov, J.A.Fedotova, D.A.Skripka, M.G.Lukashevich, B.Hackenbroich, M.Holdenried, H.Micklitz
Authors: Мазаник, А. А.
Углов, В. В.
Федотова, Ю. А.
Скрипка, Д. А.
Лукашевич, М. Г.
Hackenbroich, B.
Holdenried, M.
Micklitz, H.
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 39-40.
Abstract: Изучены температурная зависимость сопротивления и намагниченность тонких пленок железа имплантированных немагнитными ионами бора и азота с дозой 5x10^® - 4х10" ион/см^ и энергиями 24 и 60 кэВ. Показано, что последовательная ионная имплантация немагнитных ионов в ферромагнитные металлические пленки позволяет управлять процессами переноса заряда, осуществляя плавный переход металл-изолятор, а также изменять их магнитные характеристики.
Abstract (in another language): The temperature dependence of resistance and magnetization of thin Iron films implanted by nonmagnetic ions of boron and nitrogen in dose range 5x10'® - 4x10" ions/cm^ at energies 24 and 60 keV have been investigated. The films with thickness ranged between 120 and 240 nm were deposited by means of electron beam evaporation on oxidized silicon wafers and successive implanted by boron and nitrogen at multi-energy regime. The temperature dependence of resistance of the samples disordered by irradiation illustrates the metal insulator transition in these systems. We have Identified weak localization effect in the temperature range below 35K on the metallic side of the transition studding the resistance temperature dependence of the samples implanted by boron with dose 1,5x10" BVcm^ and energy 30 keV. It was found that multienergy implantation (boron 2x10" BVcm^, energy 60 keV plus 1x10" B*/cm^, energy 240 keV) does not change the metallic type of the resistance. The samples successively Implanted by ions of boron and nitrogen (2x10" B*/cm^, (60 keV) and 1x10 Vcm^, (32 keV)) have negative temperature coefficient of resistance and show strong localization regime with activation energy about 10 meV at T<40K. The hysteresis loops at room temperature of all samples show ferromagnetic behavior, except for the sample implanted with boron. This sample shows uperparamagnetic behavior and weak tendency to saturation of magnetization in the magnetic field B=0,2-1T.
URI: http://elib.bsu.by/handle/123456789/203762
ISBN: 985-445-236-0
Appears in Collections:2001. Взаимодействие излучений с твердым телом

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