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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/27440
Title: Electrical Properties of the Layered Single Crystals TlGaSe2 and TlInS2
Authors: Fedotov, A. K.
Tarasik, M. I.
Svito, I. A.
Zhukowski, P.
Koltunowicz, T. N.
Mammadov, T. G.
Seyidov, M. Yu.
Suleymanov, R. A.
Grivickas, V.
Bicbaevas, V.
Issue Date: Jul-2012
Publisher: Electrical Review, R.88, N.7a (2012) 301–304
Abstract: In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 – 300 K, the phase transitions at the temperatures of 240 – 245 K and 105 – 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples.
URI: http://elib.bsu.by/handle/123456789/27440
ISSN: 0033-2097
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